DRAM’s
Address lines split into row and column addresses. A read operation consists of:
- RAS (Row access strobe)
- CAS (Column access strobe)
- If device has been precharged, access time = RAS + CAS
- If not, have to add precharge time
- RAS, CAS, and Precharge are of the same order of magnitude
In DRAM data needs to be written back after a read, hence cycle time > access time